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IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.
Product Details
- Edition:
- 1.0
- Published:
- 07/13/2020
- Number of Pages:
- 51
- File Size:
- 1 file , 2.5 MB